42814hk tc-00003117/90110tkim pe no. a1804-1/5 http://onsemi.com semiconductor components industries, llc, 2014 april, 2014 cph3457 n-channel power mosfet 30v, 3a, 95m ? , single cph3 stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. features ? on-resistance r ds (on)1=73m ? (typ.) ? 1.8v drive ? halogen free compliance ? protection diode in specifcations absolute maximum ratings at ta=25c parameter symbol conditions value unit drain-to-source voltage v dss 30 v gate-to-source voltage v gss 12 v drain current (dc) i d 3 a drain current (pulse) i dp pw10s, duty cycle 1% 12 a power dissipation p d when mounted on ceramic substrate (900mm 2 0.8mm) 1.0 w junction temperature tj 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7015a-004 ordering number : ena1804b product & package information ? package : cph3 ? jeita, jedec : sc-59, to-236, sot-23 ? minimum packing quantity : 3,000 pcs./reel packing type: tl marking electrical connection 1 2 3 lp lot no. tl cph3457-tl-h CPH3457-TL-W 1 : gate 2 : source 3 : drain cph3 2.9 0.05 0.4 2.8 1.6 0.2 0.6 0.6 0.9 0.2 0.15 2 1 3 0.95 ordering information see detailed ordering and shipping information on page 2 of this data sheet.
cph3457 no. a1804-2/5 electrical characteristics at ta=25c parameter symbol conditions value unit min typ max drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0v 30 v zero-gate voltage drain current i dss v ds =30 v, v gs =0v 1 m a gate-to-source leakage current i gss v gs =8v, v ds =0v 10 m a gate threshold voltage v gs (th) v ds =10v, i d =1ma 0.4 1.3 v forward transconductance g fs v ds =10v, i d =1.5a 2.7 s static drain-to-source on-state resistance r ds (on)1 i d =1.5a, v gs =4.5v 73 95 m ? r ds (on)2 i d =0.75a, v gs =2.5v 95 133 m ? r ds (on)2 i d =0.3a, v gs =1.8v 135 203 m ? input capacitance ciss v ds =10v, f=1mhz 265 pf output capacitance coss v ds =10v, f=1mhz 35 pf reverse transfer capacitance crss v ds =10v, f=1mhz 28 pf turn-on delay time t d (on) see specifed test circuit. 5.1 ns rise time t r see specifed test circuit. 10 ns turn-off delay time t d (off) see specifed test circuit. 137 ns fall time t f see specifed test circuit. 36 ns total gate charge qg v ds =15v, v gs =4.5 v, i d =3a 3.5 nc gate-to-source charge qgs v ds =15v, v gs =4.5 v, i d =3a 0.57 nc gate-to-drain miller charge qgd v ds =15v, v gs =4.5 v, i d =3a 0.93 nc forward diode voltage v sd i s =3a, v gs =0v 0.87 1.2 v switching time test circuit ordering information device package shipping memo cph3457-tl-h cph3 3,000pcs./reel pb-free and halogen free CPH3457-TL-W pw=10ms d.c.1% 4.5v 0v v in p. g 50? g s i d =1.5a r l =10? v dd =15v v out v in d cph3457 product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions.
cph3457 no. a1804-3/5 i d - - v gs(th) drain current, i d - - a gate-to-source vo ltage, v gs - - v drain-to-source vo ltage, v ds - - v i d - - v ds drain current, i d - - a 0 5 6 4 3 2 1 0 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.2 0.4 0.6 0.8 1.0 0.1 0.3 0.5 0.7 0.9 it15268 0 1.2 0.6 1.0 0.4 0.8 0.2 1.4 1.6 -- 25 c hd15269 2.5v 1.8v 4.5v ta =75 c v ds =10v 8.0v 25 c v gs =1.2v 6.0v 1.5v ta =25 c gate-to-source vo ltage, v gs - - v static drain-to-source on-state resistance, r ds (on) - - m? static drain-to-source on-state resistance, r ds (on) - - m? ambient temperature, t a - - c r ds (on) - - t a r ds (on) - - v gs i s - - v sd source current, i s - - a forward diode v oltage, v sd - - v ciss, coss, crss - - v ds ciss, coss, crss - - pf drain-to-source vo ltage, v ds - - v drain current, i d - - a g fs - - i d forward tr ansconductance, g fs - - s sw time - - i d switching t ime, s w t ime - - ns drain current, i d - - a hd15272 hd15273 0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1.0 7 5 3 2 2 7 5 3 0.1 1.0 23 57 0.01 23 57 23 ta = - -25 c v ds =10v 0.001 2 v gs =0v 0.1 1.0 23 57 23 7 5 v dd =15v v gs =4.5v t d (on) t d (of f) t f it15274 1 234 7 5 3 7 5 3 2 100 10 2 51 0 6789 ciss coss crss it15275 10 2 3 7 5 100 7 5 2 3 3 2 ta =75 c 25 c - -25 c f=1mhz t r 75 c 25 c 3 0.01 7 5 2 3 7 5 0.1 2 3 7 5 1.0 2 3 7 5 0246 10 8 50 200 100 150 250 300 0 50 100 250 200 150 0 it15790 it15791 i d =0.3a 1.5a ta =25 c 0.75a - -60 - -40 - -20 02 04 06 08 0 100 120 140 160 v gs =1.8v , i d =0.3a v gs =4.5v , i d =1.5a v gs =2.5v , i d =0.75a
cph3457 no. a1804-4/5 s o a drain-to-source vo ltage, v ds - - v drain current, i d - - a to tal gate cha rg e, qg - - nc v gs - - qg gate-to-source vo ltage, v gs - - v 0 3.5 3.0 1.5 1.0 0.5 2.0 2.5 it15276 0 1.0 0.5 3.5 3.0 2.5 2.0 1.5 4.5 4.0 v ds =15v i d =3a 2 3 3 2 5 7 2 0.1 3 5 7 2 1.0 0.01 23 55 3 2 7 23 57 23 57 0.01 0.1 1.0 10 hd15792 100 m s 10ms 100ms operation in this area is limited by r ds (on). i d =3a dc operation ( ta =25 c ) i dp =12a (pw10ms) 1ms 3 5 7 10 10 m s ta =25 c single pulse when mounted on ceramic substrate (900mm 2 0.8mm) ambient t emperature, ta - - c p d - - t a power dissipation, p d - - w hd15789 0 0 20 40 60 80 100 140 120 1.2 1.0 0.6 0.4 0.8 0.2 160 when mounted on ceramic substrate (900mm 2 0.8mm)
cph3457 ps no. a1804-5/5 outline drawing land pattern example cph3457-tl-h, CPH3457-TL-W mass (g) unit 0.013 * for reference mm unit: mm 0.6 2.4 0.95 0.95 1.4 note on usage : since the cph3457 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner.
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